Computational Modelling Group

Modelling the Combined Effects of Total Ionizing Dose and Random Dopant Fluctuations in sub-100 nm gate-length Transistors

Kees de Groot (Investigator), Eleni Chatzikyriakou

The radiation hardness of state-of-the-art silicon-on-insulator transistors of gate length dimensions of 90 nm and beyond is investigated. The combined effects of oxide charges and random fluctuations of the dopant atoms in silicon are considered. It is demonstrated that a parasitic channel forms at the interface of buried oxide and shallow trench isolation regions of the device and that this effect is aggravated by random dopant fluctuations.