Nanoscale Device Modelling Research Positions IBM India
- Apply by
- 30th June 2011
- Carbon nanotubes, Nanoscale Assemblies
- Petrina Butler
Subject: Nanoscale Device Modelling Research Positions IBM India
From: Samarth Agarwal
Nanoscale Device Modeling Research Positions IBM India Semiconductor Research and Development Center, Bangalore
The IBM India Semiconductor Research and Development Center invites applications from outstanding scientists/engineers for multiple positions in the area of nano science and technology at IBM, Bangalore, India. The candidates are expected to contribute to the design, theory, and modeling of next generation semiconductor nanodevices. The research and development work involves ab-initio physics based modeling and Technology-CAD for the 32/22/14nm and beyond devices.
Atomistic/Quantum Effects in Nanodevices
This work involves theoretical and modeling of quantum effects in 32/22/14nm and beyond devices: these include carrier transport, band-structure, high-k materials modeling, workfunction engineering and related phenomena for enabling the advanced 32/22/14nm high performance, low power. Another area of interest is in materials/devices physics and modeling, including mixed ionic/electronic conduction materials, workfunction engineering, and related phenomenon for phase change memory.
Candidates to be considered for this area are required to have a strong understanding of solid-state physics, semiconductor device physics/engineering, electronic structure and bandstructure and related areas. The candidates are also expected to have a strong background electronic structure methods, device physics, numerical programming, hands on experience with ab-initio modeling tools, and computer programming in mixed language environment.
Technology – CAD Development and Calibration
This work involves the improvement and development of an IBM proprietary tool for the simulation of leading edge semiconductor devices. In particular, physical and numerical models for carrier transport influenced by e.g. , channel materials, strain, high-k materials, and crystallographic orientation on device performance will be developed and implemented. On the calibration side, the IBM device simulator is going to be used for the 32/22/14nm devices.
A comprehensive knowledge of modern device physics is essential for these positions, including both FET and BJT device operation, as well as bulk and Silion-on-Insulator device structures. Also, a good background and understanding of quantum phenomenon relevant to semiconductor nanodevices is essential. Computer/Software Skills – Demonstrated proficiency with C++, C, and Tcl are required, and experience with team-based large scale software design is desired. Familiarity with concepts related to numerical solution of PDEs, and the ability to realize robust numerical implementations of semiconductor-related physical models in discretized form, are highly desired. Experience with scientific computation on massively parallel computer architectures is a plus. Familiarity with the Linux and/or AIX operating systems, as well as the AFS file system, would be an added plus.
Interested applicants for the above regular research positions should have a Ph.D/MS in Physics, Electrical Engineering, Applied Physics, Computer Science, or Theoretical Materials Science.
Please send your resume to, kotamurali(AT)in.ibm.com
About IBM Semiconductor Research and Development Center
IBM's Semiconductor Research and Development Center is responsible for the definition and development of industry leading technologies such as Copper Interconnect, Silicon on Insulator (SOI), High-Performance Logic-Based Embedded DRAM technologies, and SiGe for RF and analog applications, and high-k material technologies. SRDC is also the leading organization in defining the most advanced technologies for the 45 nm and 22 nm nodes, including research in various aspects of Lithography, strained silicon, and Magnetic RAM (MRAM). IBM SRDC develops all of IBM’s semiconductor technologies including SOI, Bulk CMOS, RFCMOS, HV CMOS, SiGe HBT BiCMOS, and nanodevice technologies. For more information about leadership semiconductor technologies at IBM, please visit www.ibm.com/chips.